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MMBT2907FW Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT2907FW Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente MMBT2907FW PNP Silicon General Purpose Transistor 20-Oct-2009 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMBT2222FW) Ideal for Medium Power Amplification and Switching MARKING CODE MMBT2907FW = 2F MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Emitter Voltage VCEO -60 Vdc Collector - Base Voltage VCBO -60 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc Total Device Dissapation FR-5 Board (1) TA=25℃ PD 150 mW Thermal Resistance, Junction to Ambient RθJA 833 ℃ / W Junction & Storage Temperature TJ, TSTG -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. MAX. UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = -10mAdc, IB = 0 (2) V(BR)CEO -60 - Vdc Collector-Base Breakdown Voltage IC = -10 µAdc, IE = 0 V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage IE = -10 µAdc, IC = 0 V(BR)EBO -5 - Vdc Collector Cut-Off Current VCB =-50 Vdc, IE = 0 ICBO - -10 nAdc Emitter Cut-Off Current VEB = -4 Vdc, IC = 0 IEBO - -10 nAdc ON CHARACTERISTICS IC =-0.1mAdc, VCE = -10 Vdc 75 IC =-1.0mAdc, VCE = -10 Vdc 100 IC =-10mAdc, VCE = -10 Vdc 100 IC =-150mAdc, VCE = -10 Vdc 100 300 DC Current Gain IC =-500mAdc, VCE = -10 Vdc hFE 50 IC =-150mAdc, IB = -15 mAdc - -0.4 Vdc Collector-Emitter Saturation Voltage IC =-500mAdc, IB = -50 mAdc VCE(sat) -1.6 Vdc IC =-150mAdc, IB = -15 mAdc -1.3 Vdc Base-Emitter Saturation Voltage IC =-500mAdc, IB = -50 mAdc VBE(sat) -2.6 Vdc SMALL SIGNAL CHARACTERISTICS Curren-Gain-Bandwidth Product VCE = -12Vdc, IC=-2.0mAdc,f=30MHz FT 140 MHz Output capacitance VCB = -12 Vdc, IE = 0, f=1MHz CoBO 5.0 pF SWITCHING CHARACTERISTICS Turn-On Time Ton 45 nS Delay Time Td 10 nS Rise Time VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc Tr 40 nS Turn-Out Time ToFF 100 nS Storage Time TS 80 nS Fall Time VCC =-60 Vdc, IC = -150mAdc, IB1= IB2 =-15 mAdc TF 30 nS Note:1.FR-5=1.0x0.75x0.062 in 2.Pulse Test: Pulse Width=300μ S, Duty Cycle≦ 2.0% SOT-523 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.50 1.70 G 0.00 0.15 B 1.45 1.75 H 0.28 0.40 C 0.75 0.85 J 0.10 0.20 D 0.70 0.90 K - - E 0.90 1.10 L 0.75 0.85 F 0.25 0.33 |
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