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MMBT5551 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT5551 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual MMBT5551 NPN Silicon General Purpose Transistor COLLECTOR BASE EMITTER K J C H L A B S G V 3 1 2 D Top View Power dissipation PCM: 0.3 W (Tamb=25 C) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature r TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) o C o Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 http://www.SeCoSGmbH.com Elektronische Bauelemente FEATURES ange Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE= 100 µA, IC=0 6 V Collector cut-off current ICBO VCB=180V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 µA hFE(1) VCE= 5V, IC= 1mA 80 hFE(2) VCE= 5V, IC=10mA 80 250 DC current gain hFE(3) VCE= 5V, IC=50mA 30 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 1 V Transition frequency fT VCE=10V, IC= 10mA, f=100MHz 80 MHz DEVICE MARKING MMBT5551= G1 01-Jun-2004 Rev. B Page 1 of 3 C o RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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