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MMBTA42 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBTA42 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual MMBTA42 NPN Silicon General Purpose Transistor DEVICE MARKING MMBTA42=1D RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 01-June-2004 Rev. B Page 1 of 2 · Plastic-Encapsulate Transistors · Power dissipation & Collector current Pcm: 0.3W Icm: 0.3A · High voltage V(BR): 300V FEATURES COLLECTOR 3 1 BASE 2 EMITTER K J C H L A B S G V 3 1 2 D Top View 1 2 3 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 http://www.SeCoSGmbH.com Elektronische Bauelemente ELECTRICAL CHARACTERISTICS Tamb=25 ¥ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 μA， IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 5 V Collector cut-off current ICBO VCB=200 V , IE=0 0.25 μA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 μA HFE（1） VCE= 10V, IC= 1mA 60 HFE（2） VCE= 10V, IC=10mA 100 200 DC current gain HFE（3） VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB=2mA 0.9 V Transition frequency fT VCE= 20V, IC= 10mA f=30MHz 50 MHz |
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