MMBTA92W datasheet(1/2 Pages) SECOS

Part #	MMBTA92W

Description	General Purpose Transistor

PDF	2 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 2 page

Any changing of specification will not be informed individual

MMBTA92W

PNP Silicon

General Purpose Transistor

n

RoHS Compliant Product

Power dissipation & Collector current

Pcm: 0.2W Icm: -0.3A

High voltage V(BR): -300V

FEATURES

http://www.SeCoSGmbH.com

Elektronische Bauelemente

ELECTRICAL

CHARACTERISTICS

Tamb=25

¥

unless

otherwise

specified

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -100uA

， IE=0

-300

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= -1 m A

， IB=0

-300

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100 A

， IC=0

-5

V

Collector cut-off current

ICBO

VCB=-200 V ,

IE=0

-0.25

μA

Emitter cut-off current

IEBO

VEB=-5V ,

IC=0

-0.1

μA

HFE（1）

VCE= -10V,

IC=-1mA

60

HFE（2）

VCE= -10V,

IC=-10mA

100

200

DC current gain

HFE（3）

VCE=-10V,

IC=-30mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=-20 mA,

IB= -2m A

-0.2

V

Base-emitter saturation voltage

VBE(sat)

IC= -20 m A,

IB=-2m A

-0.9

V

Transition frequency

fT

VCE=-20V, IC=-10mA

f=30MHz

50

MHz

DEVICE MARKING

MMBTA92W=K3R

01-Jun-2002 Rev. A

Page 1 of 2

2. Base

1.Emitter

3. Collector

K

J

C

H

L

A

B S

G

V

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323

D

Top View

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