MMDT3946 datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

MMDT3946

NPN / PNP

Multi-Chip Transistor

14-Apr-2010 Rev. E

Page 2 of 5

ELECTRICAL CHARACTERISTICS OF NPN 3904 at Ta = 25°C

CHARACTERISTIC

TEST CONDITION

SYMBOL

MIN.

MAX.

UNIT

Collector-Base Breakdown Voltage

IC=10μA, IE=0

V(BR)CBO

Collector-Emitter Breakdown Voltage

IC = 1 mA, IB = 0

V(BR)CEO

Emitter-Base Breakdown Voltage

IE=10μA, IC=0

V(BR)EBO

Collector Cutoff Current

VCB=30V, IE=0

ICBO

0.05

μA

Collector Cutoff Current

VEB=30V, IB=0

ICEO

0.5

μA

Emitter Cutoff Current

VEB=5V, IC=0

IEBO

0.05

μA

VCE=1V, IC=0.1mA

hFE(1)

VCE=1V, IC=1mA

hFE(2)

VCE=1V, IC=10mA

hFE(3)

100

300

VCE=1V, IC=50mA

hFE(4)

DC Current Gain

VCE=1V, IC=100mA

hFE(5)

IC=10mA, IB=1mA

VCE(sat)1

0.2

Collector-emitter Saturation Voltage

IC=50mA, IB=5mA

VCE(sat)2

0.3

IC=10mA, IB=1mA

VBE(sat)1

0.65

0.85

Base-Emitter Saturation Voltage

IC=50mA, IB=5mA

VBE(sat)2

0.95

Output Capacitance

VCB=5V, IE=0, f=1MHz

Cob

Transition Frequency

VCE=20V, IC=20mA, f=100MHz

300

MHz

Noise Figure

VCE=5V, IC=0.1mA, f=1kHz

Rg=1KΩ,

Delay TIme

Rise Time

VCC=3V, VBE=0.5V,

IC=10mA, IB1=- IB2 = 1mA

Storage Time

200

Fall Time

VCC=3V,

IC=10mA, IB1=- IB2 = 1mA

ABSOLUTE MAXIMUM RATINGS OF PNP 3906 at Ta = 25°C

PARAMETER

SYMBOL

VALUE

UNITS

Collector to Base Voltage

VCBO

-40

Collector to Emitter Voltage

VCEO

-40

Emitter to Base Voltage

VEBO

-5

Collector Currrent – Continuous

-0.2

Collector Power Dissipation

0.2

Junction Temperature

150

℃

Storage Temperature

TSTG

-55~150

℃

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