MPSA13 datasheet(1/3 Pages) SECOS

Part #	MPSA13

Description	NPN Epitaxial Silicon Transistor

PDF	3 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 3 page

Any changing of specification will not be informed individual

MPSA13 / 14

NPN Epitaxial Silicon Transistor

1 2

TO-92

1. EMITTER

2. BASE

.

COLLECTOR

1

2

3

Darlington TRANSISTOR

FEATURES

Power dissipation

PCM:

0.625

W (Tamb=25

℃)

Collector current

ICM:

0.5

A

Collector-base voltage

V(BR)CBO:

30

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA , IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

10

V

Collector cut-off current

ICBO

VCB= 30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 10V, IC=0

0.1

µA

HFE(1) *

VCE=5V, IC=10mA

MPSA13

MPSA14

5000

10000

DC current gain

HFE(2) *

VCE=5V, IC=100mA

MPSA13

MPSA14

10000

20000

Collector-emitter saturation voltage

VCE(sat) *

IC= 100mA, IB=0.1 mA

1.5

V

Base-emitter

voltage

VBE(on) *

VCE=5V, IC= 100mA

2.0

V

Transition frequency

f T

VCE=5V, IC= 10mA , f=100MHz

125

MHz

* Pulse Test: pulse width 300µs, duty cycle 2%.

01-Jun-2002 Rev. A

Page 1 of 3

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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