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MPSA42 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MPSA42 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente 02-Apr-2010 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Collector Emitter RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage NPN Transistor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 300 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.5 A Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C Thermal Resistance, junction to Ambinet RθJA 200 °C/ mW Thermal Resistance, junction to Case RθJC 83.3 °C/ mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO 300 - - V IC=100μA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 300 - - V IC=1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100μA, IC = 0A Collector Cut-Off Current ICBO - - 0.25 μA VCB=200 V, IE = 0 A Emitter Cut-Off Current IEBO - - 0.1 μA VEB=5 V, IC =0 mA DC Current Gain hFE(1) 60 - - VCE=10V, IC=1mA hFE(2) 80 - 250 VCE=10V, IC=10mA hFE(3) 75 - - VCE=10V, IC=30mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.2 V IC=20mA, IB=2mA Base to Emitter Voltage VBE(sat) - - 0.9 V IC=20mA, IB=2mA Transition Frequency fT 50 - - MHz VCE = 20V, IC = 10mA, f=30MHz CLASSIFICATION OF hFE(2) Rank A B1 B2 C Range 80-100 100-150 150-200 200-250 TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 A C E K F D B G H J |
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