Elektronische Bauelemente

S2N7002

Ω

N-Ch Small Signal MOSFET

24-Nov-2009 Rev. B

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

1

Gate

Drain

3

702

W

702 =Device Code

W =Date Code

2

Source

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Pb-Free Package is Available

PACKAGING INFORMATION

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

60

Vdc

60

Vdc

1

±115

mAdc

Continuous Drain Current

1

±75

mAdc

Pulsed Drain Current

2

±800

mAdc

Continuous Gate-Source Voltage

±20

Vdc

5

≦

0

µS)

±40

Vpk

THERMAL CHARACTERISTICS

225

mW

Total Device Dissipation

FR-5 Board

3

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R

θJA

556

°C/W

Junction and Storage Temperature

-55~150

°C

Note: 1. The Power Dissipation of the package may result in a lower continuous drain current.

2. Pulse Test: Pulse Width ≦300

µs, Duty Cycle ≦ 2.0%

3. FR-5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITION

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

-

-

Vdc

µAdc

-

-

1.0

Zero Gate Voltage Drain Current

-

-

500

µAdc V

Gate-Body Leakage Current, Forward

-

-

100

nAdc

Gate-Body Leakage Current, Reverse

-

-

-100

nAdc

ON CHARACTERISTICS

1

Gate Threshold Voltage

1.0

1.6

2.5

Vdc

µAdc

On-State Drain Current

500

-

-

mA

2.0V

≧

-

-

3.75

Static Drain-Source On-State Voltage

-

-

0.375

Vdc

-

1.4

7.5

Static Drain-Source On-State Resistance

-

1.8

7.5

-

-

13.5

Static Drain-Source On-State Resistance

-

-

13.5

Forward Transconductance

80

-

-

2V

≧

DYNAMIC CHARACTERISTICS

Input Capacitance

-

17

50

pF

Output Capacitance

-

10

25

pF

Reverse Transfer Capacitance

-

2.5

5.0

pF

SWITCHING CHARACTERISTICS

1

Turn-On Delay Time

-

7

20

Turn-Off Delay Time

-

11

40

nS

≅500mAdc

BODY-DRAIN DIODE RATINGS

Diode Forward On-Voltage

-

-

-1.5

Vdc

Source Current Continuous(Body Diode)

-

-

-115

mAdc

Source Current Pulsed

-

-

-800

mAdc

Note: 1. Pulse Test: Pulse Width ≦300

µs, Duty Cycle ≦ 2.0%

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.80

3.04

G

0.013

0.10

B

2.10

2.55

H

0.45

0.60

C

1.20

1.40

J

0.08

0.177

D

0.89

1.15

K

0.6 REF.

E

1.80

2.00

L

0.89

1.02

F

0.30

0.50

SOT-23

1

Gate

2

Source

Drain

3