S8550T datasheet(1/2 Pages) SECOS

Part #	S8550T

Description	General Purpose Transistor

PDF	2 Pages

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

S8550T

PNP Silicon

General Purpose Transistor

01-June-2007 Rev. C

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

2.54

(1.27 Typ.)

13

2

1: Emitter

2: Base

3: Collector

1.25

4.55 0.2

0.1

0.2

3.5

0.46

0.43 0.07

0.08

TO-92

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

Excellent hFE linearity

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-25

V

Emitter to Base Voltage

VEBO

-5

V

Collector Currrent

IC

-500

mA

Total Power Dissipation

PD

625

mW

Junction, Storage Temperature

TJ, TSTG

+150, -55 ~ +150

℃

ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base Breakdown Voltage

V(BR)CBO

-40

-

V

IC = -100 μA, IE = 0

Collector-emitter Breakdown Voltage

V(BR)CEO

-25

-

V

IC = -1 mA, IB = 0

Emitter-base Breakdown Voltage

V(BR)EBO

-5

-

V

IE = -100 μA, IC = 0

Collector Cut-off Current

ICBO

-

-0.1

μA

VCB = -40 V, IE = 0

Collector Cut-off Current

ICEO

-

-0.1

μA

VCE = -20 V, IB = 0

Emitter Cut-off Current

IEBO

-

-0.1

μA

VEB = -3 V, IC = 0

hFE(1)

85

-

400

VCE = -1 V, IC = -50 mA

DC Current Gain

hFE(2)

50

-

VCE = -1 V, IC = -500 mA

Collector-emitter Saturation Voltage

VCE(sat)

-

-0.6

V

IC = -500 mA, IB = -50 mA

Base-emitter Saturation Voltage

VBE(sat)

-

-1.2

V

IC = -500 mA, IB = -50 mA

Transition Frequency

f T

150

-

MHz

VCE = -6 V, IC= -20 mA, f = 30 MHz

CLASSIFICATION OF hFE

Rank

B

C

D

D3

Range

85 - 160

120 - 200

160 - 300

300 - 400

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