S9014 datasheet(1/2 Pages) SECOS

Part #	S9014

Description	Low Level & Low Noise

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Any changing of specification will not be informed individual

S9014

NPN Silicon

Pre-Amplifier, Low Level & Low Noise

DEVICE MARKING: S9014 =J6

Power dissipation

PCM : 0.2 W

Collector Current

ICM : 0.1 A

Collector-base voltage

FEATURES

Collector

3

1

Base

2

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

http://www.SeCoSGmbH.com

Elektronische Bauelemente

1

2

ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)

V(BR)CBO : 50 V

Operating & storage junction temperature

Tj, Tstg : - 55OC ~ + 150OC

3

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100μA， IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 0.1mA， IB=0

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA， IC=0

5

V

Collector cut-off current

ICBO

VCB=50 V , IE=0

0.1

μ

A

Collector cut-off current

ICEO

VCE=35V , IB=0

0.1

μ

A

Emitter cut-off current

IEBO

VEB= 3V ,

IC=0

0.1

μ

A

DC current gain

hFE

VCE=5V, IC= 1mA

200

1000

Collector-emitter saturation voltage

VCE(sat)

IC=100 mA, IB= 5mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=100 mA, IB= 5mA

1

V

Transition frequency

fT

VCE=5V, IC= 10mA

f=30MHz

150

MHz

CLASSIFICATION OF hFE(1)

Rank

L

H

Range

200-450

450-1000

01-Jun-2004 Rev. B

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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