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SCS521S Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCS521S Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Any changing of specification will not be informed individua SCS521S Schottky Barrier Diode http://www.SeCoSGmbH.com Elektronische Bauelemente 0.8±0.05 CATHODE MARK 0.6±0.1 0.12±0.05 SOD-523 0.3±0.05 Dimensions in millimeters MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol Value Unit DC reverse voltage VR 30 Volts Mean rectifying current Io mA Peak forward surge current IFSM A Junction Temperature TJ 125 C Storage Temperature Range Tstg – 40 to +125 C 200 1 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Forward voltage ( = 200mA) VF 0.50 Volts Reverse current ( V = 10V) IR 30 IF R – – – – m A l ° ° F F FEATURES Extremely small surface mounting type. (EMD2) . Io=200mA guaranteed despite the size. Silicon epitaxial planer Low V .(V =0.40V Typ. At 200mA) MECHANICAL DATA . . .. Low current rectification and high speed switching ° ° 01-Jul-2009 Rev. B Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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