SDF920NE datasheet(2/4 Pages) SECOS

2 / 4 page

SDF920NE

11A, 20V, RDS(ON) 22 m

Dual N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

20-Apr-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Condition

Static

Gate Threshold Voltage

VGS(th)

0.5

VDS=VGS, ID=250μA

Gate-Body Leakage Current

IGSS

±10

μA

VDS=0, VGS= ±12V

Zero Gate Voltage Drain Current

IDSS

μA

VDS=16V, VGS=0

VDS=16V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

VDS=5V, VGS=4.5V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS=4.5V, ID=6.7A

10.5

VGS=4V, ID=5.6A

VGS=2.5V, ID=4.5A

Forward Transconductance

gfs

VDS=15V, ID=6A

Diode Forward Voltage

VSD

0.7

IS=0.5A, VGS=0

Dynamic

Total Gate Charge

9.2

ID=6A, VDS=10V, VGS=4.5V

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

2.8

Turn-On Delay Time

Td(on)

1.7

VDD=10V, VGEN=4.5V

ID=1A, RL=15Ω

Rise Time

2.3

Turn-Off Delay Time

Td(off)

1.1

Fall Time

4.4

Notes

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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