IRF460

Prelim. 11/98

Website http://www.semelab.co.uk

Characteristic

Test Conditions

Min.

Typ.

Max. Unit

12

3

(case)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

6.35 (0.25)

9.15 (0.36)

1.52 (0.06)

3.43 (0.135)

TO–3 (TO–204AA) Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

500

21

84

±20

300

2.4

–55 to 150

300

V

A

A

V

W

W/°C

°C

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate – Source Leakage Current

Gate Threshold Voltage

500

25

250

±100

24

21

0.27

0.31

V

µA

nA

V

A

Ω

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380

µS , Duty Cycle < 2%

500V

21A

0.27

Ω

Ω

Pin 1 – Gate

Pin 2 – Source

Case – Drain