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SEF102M Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SEF102M
Description  1.0 Amp High Efficiency Recovery Rectifiers
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SEF102M Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SEF101M~SEF107M
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
Elektronische Bauelemente
09-Feb-2011 Rev. A
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Part Number
Unit
Testing
Condition
SEF
101M
SEF
102M
SEF
103M
SEF
104M
SEF
105M
SEF
106M
SEF
107M
Forward Voltage (Max.)
VF
1
1.3
1.7
V
Average Forward
Rectified Current (Max.)
IO
1
A
Ambient
Temperature =50°C
Forward Surge Current
IFSM
30
A
8.3ms single half
sine-wave
superimposed on rated
load (JEDEC method)
DC Reverse Current at
Rated DC Blocking Voltage
(Max.)
IR
5
A
VR=VRRM, TA=25°C
150
VR=VRRM,TA=100°C
Thermal Resistance
Junction to Ambient (Typ.)
RJA
42
°C/W
Diode Junction Capacitance
(Typ.)
CJ
20
pF
f=1MHz and applied 4V
DC reverse voltage
Storage and Operating
Temperature Range
TSTG, TJ
-65 ~ 175, -55 ~ 150
°C
Reverse recovery time
TRR
50
75
nS
Note:
1.
Reverse recovery time test condition, IF=0.5A, IR=1A, IRR=0.25A.



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