SID9971 datasheet(1/4 Pages) SECOS

Part #	SID9971

Description	N-Channel EnhancementMode PowerMos.FET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 4 page

Description

The SID9971 provide the designer with the best combination

Features

* Low On-Resistance

*

Simple Drive Requirement

The TO-251 is universally preferred for all commercial-industrial

surface mount applications and

suited for low voltage applications

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

such as DC/DC converters.

S

D

G

Elektronische Bauelemente

SID9971

25A, 60V,RDS(ON)36 m

N-Channel Enhancement Mode Power Mos.FET

Ω

Absolute Maximum Ratings

Drain-Source Voltage

0.31

80

25

16

39

-55~+150

Linear Derating Factor

Operating Junction and Storage Temperature Range

Tj, Tstg

Continuous Drain Current,VGS@10V

Pulsed Drain Current

Total Power Dissipation

ID@TC=100

ID@TC=25

IDM

PD@TC=25

1

C

o

C

o

C

o

W/ C

C

o

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-case

/W

C

Rthj-c

3 2

.

Thermal Resistance Junction-ambient

/W

C

Rthj-a

Max.

110

o

Gate-Source Voltage

Parameter

Symbol

Ratings

Unit

A

V

A

W

VDS

VGS

60

± 20

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of

4

G

D

S

5.3±0.2

6.6±0.2

7.0±0.2

5.6±0.2

7.0±0.2

0.75±0.15

0.5±0.05

2.3±0.1

1.2±0.3

0.5±0.1

0.6±0.1

2.3REF.

TO-251

Dimensions in millimeters

Marking Code: 9971

XXXX(Date Code)

RoHS Compliant Product

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SID9971 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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