SMS318 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMS318

220mA, 50V, RDS(ON) 3.5 

N-Channel Enhancement MOSFET

28-Apr-2011 Rev. C

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS = 0, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

0.5

μA

VGS= 0V, VDS = 50V

Gate-Body Leakage Current

IGSS

±100

VGS=±20V, VDS = 0V

On Characteristics

Gate Threshold Voltage

VGS(th)

0.5

2.0

VDS = VGS, ID =250μA

Static Drain-Source On Resistance

RDS(ON)

3.5

Ω

VGS=10V, ID =0.22A

Forward Transconductance

gFS

100

VDS=25V,,ID =0.2A, f=1.0KHz

Dynamic Characteristics

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

8.0

VDS=10V, VGS=0, f=1MHz

Switching Characteristics

Turn-On Delay Time

td(ON)

Turn-Off Delay Time

td(OFF)

VDD=30V, ,ID=0.2A,

RGEN=50Ω,

Notes:

Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout.

Short duration pulse test used to minimize self-heating effect.

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