SMS4003K datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SMS4003K

0.5 A, 30V

N-Channel MOSFET

10-Jan-2010 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

STATIC CARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID =100

µA

Gate-Source Threshold Voltage

VGS(TH)

0.8

1.6

VDS= VGS, ID =250

µA

Gate-Source Leakage Current

IGSS

±1.0

µA

VGS=±10V

Zero Gate Voltage Drain Current

IDSS

1.0

µA

VDS=30V, VGS=0V, TJ=25°C

1.5

2.0

VGS=2.5V, ID=10mA

Drain-Source On-Resistance

RDS(ON)

1.0

1.5

VGS=4.0V, ID=10mA

Forward Transconductance

gFS

0.33

VDS=3V, ID=10mA

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

Output Capacitance

COSS

19.7

Reverse Transfer Capacitance

CRSS

8.1

VDS=5V

VGS=0V

f=1MHz

SWITCHING CHARACTERISTICS

Turn-on Delay Time

Td(ON)

16.7

Rise Time

47.9

Turn-off Delay Time

Td(OFF)

65.1

Fall Time

64.2

VGS=4.5V

VDD=5V

I D=0.1A

RG=50

Total Gate Charge

1.15

Threshold Gate Charge

QG(TH)

0.15

Gate-Source Charge

QGS

0.32

Gate-Drain Charge

QGD

0.23

VGS=5V

VDS=24V

I D=0.1A

SOURCE-DRAIN DIODE CARACTERISTICS

TJ=25°C

0.65

0.7

Forward On Voltage

TJ=125°C

VSD

0.45

VGS=0V

IS =10mA

Reverse Recovery Time

Trr

VGS=0V, IS =10mA, dls/dt=8A /

µs

Note:

Pulse Test: Pulse width ≦300

µs, duty cycle ≦2%.

Switching characteristics are independent of operating junction temperatures.

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