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SSD55N03 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSD55N03
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD55N03 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Static Drain-Source On-Resistance
3
3
3
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
16.8
6
4.9
15.1
4
45.2
7.6
2326
331
174
nC
nS
pF
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
VDD=15V
ID=28A
VGS=10V
RG=3.3
RD=0.53
Ω
Ω
ID=28A
VDS=20V
VGS=5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
IDSS
1
25
6
9
uA
uA
m
30
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Ω
VGS=10V, ID=30A
VGS=4.5V, ID=30A
VDS=25V,VGS=0
VDS=20V,VGS=0
_
_
_
_
_
_
Forward Transconductance
Gfs
S
VDS=10V, ID=28A
_
_
oC
oC
RDS(ON)
4.5
7
BVDSS
BVDS/ Tj
25
0.037
1.0
3.0
100
±
V
V/
Reference to 25C, ID=1mA
o
oC
V
nA
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
VGS=0V, ID=250uA
VGS= 20V
±
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage3
Continuous Source Current(Body Diode)
IS
_
A
VD=VG=0V,VS=1.5 V
55
0
VSD
_
_
IS=2 A, VGS=0V,Tj=25 C
V
1.5
_
o
Notes:
3.
Pulse width limited by safe operating area.
Pulse width 300us, dutycycle 2%.
≦
≦
1.
2.Staring Tj=25 C,VDD=25V,L=0.1mH,RG=25 ,IAS=10A
o
Ω
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Elektronische Bauelemente
SSD55N03
55A, 25V,RDS(ON)6m
N-Channel Enhancement Mode Power Mos.FET
Ω



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