SSG4392N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4392N

2.9A, 150V, RDS(ON) 255 m

N-Ch Enhancement Mode Power MOSFET

12-May-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250μA

Gate-Body Leakage

IGSS

±10

VDS=0, VGS= ±20V

VDS=120V, VGS=0

Zero Gate Voltage Drain Current

IDSS

μA

VDS=120V, VGS=0, TJ= 55°C

On-State Drain Current

ID(on)

1.5

VDS=5V, VGS=10V

255

VGS=10V, ID=2.3A

Drain-Source On-Resistance

RDS(ON)

290

mΩ

VGS=4.5V, ID=2.2A

Forward Transconductance

gfs

VDS=15V, ID=2.3A

Diode Forward Voltage

VSD

0.7

IS=2A, VGS=0

Dynamic

Input Capacitance

Ciss

920

Output Capacitance

Coss

101

Reverse Transfer Capacitance

Crss

VDS=15V

VGS=0

f=1MHz

Total Gate Charge

Gate-Source Charge

Qgs

3.3

Gate-Drain Charge

Qgd

6.5

ID=2.3A

VDS=75V

VGS=4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD=75V

ID=2.3A

VGEN=10V

RL= 32.3Ω

RGEN=6Ω

Notes:

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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