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SSG4932N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4932N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SSG4932N 10 A, 30 V, RDS(ON) 13.5 m Dual N-Channel Mode Power MOSFET 31-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V ID @ TA = 25°C 10 A Continuous Drain Current 1 ID @ TA = 70°C 8.2 A Pulsed Drain Current 2 IDM ±50 A Continuous Source Current (Diode Conduction) 1 IS 2.3 A PD @ TA = 25°C 2.1 W Total Power Dissipation 1 PD @ TA = 70°C 1.3 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t 5 sec ≦ RθJC 40 °C / W Thermal Resistance Junction-ambient (Max.) 1 t 5 sec ≦ RθJA 60 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. D D S S G G D D |
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