SSG6612N datasheet(2/4 Pages) SECOS

2 / 4 page

SSG6612N

9.4 A, 30 V, RDS(ON) 22 m

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

06-Jan-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Static

Gate-Threshold Voltage

VGS(th)

VDS= VGS, ID= 250μA

Gate-Body Leakage

IGSS

±100

VDS= 0V, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

μA

VDS= 24V, VGS= 0V

μA

VDS= 24V, VGS= 0V, TJ= 55°C

On-State Drain Current

ID(on)

VDS= 5V, VGS= 10V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= 10V, ID= 9.2A

VGS= 4.5V, ID= 7A

Forward Transconductance

gfs

VDS= 15V, ID= 9.2A

Diode Forward Voltage

VSD

0.7

IS= 2.3A, VGS= 0V

Dynamic

Total Gate Charge

4.0

ID= 7A

VDS= 10V

VGS= 4.5V

Gate-Source Charge

Qgs

1.1

Gate-Drain Charge

Qgd

1.4

Input Capacitance

CISS

720

f = 1 MHz

VDS= 15V

VGS= 0V

Output Capacitance

COSS

165

Reverse Transfer Capacitance

CRSS

Turn-On Delay Time

Td(on)

VDD= 10V

ID= 1A

VGEN= 10V

RL= 6Ω

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

Notes:

Pulse test：PW ≦ 300

μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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