SSP7150N datasheet(2/4 Pages) SECOS

2 / 4 page

SSP7150N

3.6A, 150V, RDS(ON) 255 m

N-Channel Enhancement MOSFET

Elektronische Bauelemente

07-Apr-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test condition

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250μA

Gate-Body Leakage

IGSS

VDS=0, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

μA

VDS=120V, VGS=0

VDS=120V, VGS=0,TJ=55°C

On-State Drain Current

ID(ON)

VDS=5V, VGS=10V

Drain-Source On-Resistance

RDS(ON)

255

mΩ

VGS=10V, ID=2.9A

290

VGS=4.5V, ID=2.7A

Forward Transconductance

gFS

VDS=15V,,ID=2.9A

Diode Forward Voltage

VSD

0.76

IS=3.1A, VGS=0

Dynamic

Total Gate Charge

10.8

ID=2.9A

VDS=75V

VGS=4.5V

Gate-Source Charge

Qgs

3.3

Gate-Drain Charge

Qgd

5.6

Turn-On Delay Time

Td(ON)

10.1

ID=2.9A, VDD=75V

VGEN=10V

RL=25.9Ω, RGEN=6Ω

Rise Time

Turn-Off Delay Time

Td(OFF)

Fall Time

Input Capacitance

Ciss

848

VDS=15V, VGS=0, f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Notes:

Pulse test：PW≦300μs duty cycle≦2%.

Guaranteed by design, not subject to production testing.

SSP7150N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSP7150N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

Datasheet Download

Link URL