SSP7431P datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSP7431P

-17A, -30V, RDS(ON) 13 m

P-Channel Enhancement MOSFET

01-May-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

V(BR)DSS

-30

VGS=0, ID = -250μA

Gate-Threshold Voltage

VGS(th)

-1

VDS=VGS, ID = -250μA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= ±25V

-1

VDS= -24V, VGS=0

Zero Gate Voltage Drain Current

IDSS

-5

μA

VDS= -24V, VGS=0, TJ=55°C

On-State Drain Current

ID(ON)

-50

VDS= -5V, VGS= -10V

VGS= -10V, ID= -11.5A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -9.3A

Forward Transconductance

gFS

VDS= -15V,,ID= -11.5A

Diode Forward Voltage

VSD

-0.8

IS=2.5A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

ID= -11.5A

VDS= -15V

VGS= -5V

Turn-On Delay Time

Td(ON)

Rise Time

Turn-Off Delay Time

Td(OFF)

100

Fall Time

ID= -1A, VDD= -15V

VGEN= -10V

RL=6Ω

Notes:

1. Pulse test：PW ≦ 300 μs duty cycle ≦ 2%.

2. Guaranteed by design, not subject to production testing.

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