STT3402N datasheet(2/4 Pages) SECOS

2 / 4 page

STT3402N

6.3 A, 30 V, RDS(ON) 27 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

19-Nov-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

SWITCH OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID= 250uA

Gate-Body Leakage

IGSS

±100

VDS= 0V, VGS= ±20V

Zero Gate Voltage Drain Current

IDSS

VDS= 24V, VGS= 0V

VDS= 24V, VGS= 0V, TJ= 55°C

SWITCH ON CHARACTERISTICS

Gate-Threshold Voltage

VGS(th)

1.0

1.6

3.0

VDS=VGS, ID= 250uA

On-State Drain Current

ID(on)

VDS = 5V, VGS= 10V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= 10V, ID= 6.3A

VGS= 10V, ID= 6.3A, TJ= 55°C

VGS= 4.5V, ID= 5.5A

Forward Transconductance

gfs

VDS= 10V, ID= 6.3A

Diode Forward Voltage

VSD

0.75

1.2

IS= 1.3A, VGS= 0V

DYNAMIC

Total Gate Charge

VDS= 15V, VGS= 5V,

ID= 6.3A, RL= 6

Gate-Source Charge

Qgs

2.9

Gate-Drain Charge

Qgd

3.2

SWITCHING CHARACTERISTICS

Turn-on Delay Time

Td(on)

VDS= 15V, VGEN= 10V,

RL= 6, ID= 1A, RGEN= 6

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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