STT3520C datasheet(2/7 Pages) SECOS

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STT3520C

N-Ch: 3.7 A, 23 V, RDS(ON) 58 m

P-Ch: -2.7 A, -23 V, RDS(ON) 112 m

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

02-Dec-2010 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ

Max

Typ

Max

Maximum Junction to Ambient

t ≦ 10 sec

RJA

110

℃

/ W

Steady State

130

150

130

150

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Gate-Threshold Voltage

N-Ch

VGS(th)

VDS=VGS, ID=250uA

P-Ch

-1

VDS=VGS, ID= -250uA

Gate-Body Leakage Current

N-Ch

IGSS

100

VDS= 0 V, VGS= 12 V

P-Ch

-100

VDS= 0 V, VGS= -12 V

Zero Gate Voltage Drain

Current

N-Ch

IDSS

VDS=16 V, VGS=0 V

P-Ch

-1

VDS=-16V, VGS=0 V

N-Ch

VDS=16V, VGS=0 V, TJ=55℃

P-Ch

-10

VDS= -16V, VGS=0 V, TJ=55℃

On-State Drain Current

N-Ch

ID(on)

VDS = 5V, VGS=4.5 V

P-Ch

-5

VDS = -5V, VGS= -4.5 V

Drain-Source

On-Resistance

N-Ch

RDS(ON)

mΩ

VGS=4.5V, ID= 3.7A

P-Ch

112

VGS=-4.5V, ID= 3.1A

N-Ch

VGS=2.5V, ID= 2.7A

P-Ch

172

VGS=-2.5V, ID= -2.2A

N-Ch

160

VGS=1.8V, ID= 2.2A

P-Ch

210

VGS=-1.8V, ID= -2.0A

Forward Transconductance

N-Ch

gfs

VDS= 5V, ID= 3.7A

P-Ch

VDS= -5V, ID= 3.1A

Diode Forward Voltage

N-Ch

VSD

0.80

IS= 1.05A, VGS= 0V

P-Ch

-0.83

IS= -1.05A, VGS= 0V

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