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STT8205S Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT8205S
Description  N-Channel Enhancement Mode Power MOSFET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT8205S Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT8205S
6A, 20V, RDS(ON) 28m
N-Channel Enhancement Mode Power MOSFET
0
9-Mar-2011 Rev. B
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8205S


= Date Code
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The STT8205S provide the designer with best
combination of fast switching, low on-resistance and
cost-effectiveness. The TSOP-6 package is universally
used for all commercial-industrial surface mount applications.
FEATURES
Low on-resistance
Capable of 2.5V gate drive
Low drive current
MARKING CODE
PACKAGE INFORMATION
Package
MPQ
LeaderSize
TSOP-6
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
VGS=4.5V, TA = 25°C
6
Continuous Drain Current
3
VGS=4.5V, TA = 70°C
ID
4.8
A
Pulsed Drain Current
1
IDM
20
A
Power Dissipation
PD
1.14
W
Maximum Junction to Ambient
3
RθJA
110
°C / W
Linear Derating Factor
0.01
W / °C
Operating Junction & Storage Temperature Range
TJ, TSTG
-55~150
°C
G
G
S
S
D
D
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
0
0.10
B
2.60
3.00
H
0.60 REF.
C
1.40
1.80
J
0.12 REF.
D1.10 MAX.
K
0°
10°
E
1.90 REF.
L
0.95 REF.
F
0.30
0.50
TSOP-6
B
L
F
H
C
J
D G
K
A
E
1
23
4
5
6


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