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A733 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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A733 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor 04-Mar-2011 Rev. D Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Dissipation CLASSIFICATION OF hFE Product-Rank A733-R A733-Q A733-P A733-K Range 90~180 135~270 200~400 300~600 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -100 mA Collector Power Dissipation PD 250 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -60 - - V IC= -50µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -50 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -50µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB= -60V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -5V, IC=0 DC Current Gain hFE 90 200 600 VCE= -6V, IC= -1mA Collector to Emitter Saturation Voltage VCE(sat) - -0.18 -0.3 V IC= -100mA, IB= -10mA Base to Emitter Voltage VBE -0.58 -0.62 -0.68 V VCE = -6V, IC= -1mA Transition Frequency fT 100 - - MHz VCE= -6V, IC= -10mA Collector Output Capacitance Cob - - 6 pF VCB= -10V, IE=0, f=1MHz Noise Figure NF - - 20 dB VCE= -6V, IC= -0.3mA, f=100Hz, RG=10K 1 1 1 1Emitter 2 2 2 2Collector 3 3 3 3Base TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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