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SML30B48 Datasheet(PDF) 2 Page - Seme LAB

Part # SML30B48
Description  N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

SML30B48 Datasheet(HTML) 2 Page - Seme LAB

  SML30B48 Datasheet HTML 1Page - Seme LAB SML30B48 Datasheet HTML 2Page - Seme LAB  
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SML30B48
6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
48
192
1.3
430
6.2
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/ms
IS = – ID [Cont.] , dls / dt = 100A/ms
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
mC
Characteristic
Min.
Typ.
Max. Unit
0.34
40
RqJC
RqJA
Junction to Case
Junction to Ambient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
mS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6W
pF
nC
ns
4450
900
285
175
25
75
15
14
50
8
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VGS = 0V , ID = 250mA
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 1.0mA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
300
25
250
±100
2
4
48
0.070
V
mA
nA
V
A
W
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS



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