2N7002KA datasheet(1/3 Pages) KEC

Part #	2N7002KA

Description	N Channel MOSFET

PDF	3 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2011. 4. 4

1/3

SEMICONDUCTOR

TECHNICAL DATA

2N7002KA

N Channel MOSFET

ESD Protected 2000V

Revision No : 1

INTERFACE AND SWITCHING APPLICATION.

FEATURES

・ESD Protected 2000V.

・High density cell design for low RDS(ON).

・Voltage controlled small signal switch.

・Rugged and reliable.

・High saturation current capablity.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

1. SOURCE

2. GATE

3. DRAIN

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=10μA

60

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

-

1

μA

Gate-Body Leakage, Forward

IGSSF

VGS=20V, VDS=0V

-

10

μA

Gate-Body Leakage, Reverse

IGSSR

VGS=-20V, VDS=0V

-

-10

μA

ESD-Capability*

-

C=100pF, R=1.5K

Ω

Both forward and reverse

direction 3 pulse

2000

-

V

G

D

S

Type Name

Marking

Lot No.

2P

EQUIVALENT CIRCUIT

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

ID

300

mA

Pulsed (Note 1)

IDP

1200

Drain Power Dissipation (Note 2)

PD

350

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Note 1) Pulse Width

≤10㎲, Duty Cycle≤1%

Note 2) Package mounted on 99% Alumina 10

×8×0.6mm

*Failure cirterion : IDSS > 1μA at VDS=60V, IGSSF>10μA at VGS=20V, IGSSR>-10μA at VGS=-20V.

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2N7002KA Datasheet(PDF) 1 Page - KEC(Korea Electronics)

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