BC327 datasheet(1/2 Pages) KEC

Part #	BC327

Description	EPITAXIAL PLANAR PNP TRANSISTOR

PDF	2 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2008. 4. 24

1/2

SEMICONDUCTOR

TECHNICAL DATA

BC327

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 3

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

High Current : IC=-800mA.

DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).

For Complementary with NPN type BC337.

MAXIMUM RATING (Ta=25

)

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-45V, IE=0

-

-100

nA

DC Current Gain (Note)

hFE

VCE=-1V, IC=-100mA

100

-

630

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-

-0.7

V

Base-Emitter Voltage

VBE(ON)

VCE=-1V, IC=-300mA

-

-1.2

V

Transition Frequency

fT

VCE=-5V, IC=-10mA, f=100MHz

-

100

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, f=1MHz, IE=0

-

16

-

pF

Note : hFE Classification none:100 630,

16:100

250,

25:160

400,

40:250

630

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-800

mA

Base Current

IB

-200

mA

Emitter Current

IE

800

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

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