BCW30 datasheet(1/1 Pages) KEC

Part #	BCW30

Description	EPITAXIAL PLANAR PNP TRANSISTOR

PDF	1 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1999. 12. 29

1/1

SEMICONDUCTOR

TECHNICAL DATA

BCW29/30

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 1

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Complementary to BCW31/32

MAXIMUM RATING (Ta=25

)

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

)

* : Package Mounted On 99.9% Alumina 10

8

0.6mm.

Marking

Lot No.

C1

Type Name

Lot No.

C2

Type Name

BCW29

BCW30

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-30

V

Collector-Emitter Voltage

VCEO

-20

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-100

mA

Collector Power Dissipation

PC *

350

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-65

150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Base Breakdown Voltage

V(BR)CBO

IC=-10 A

-30

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-2mA

-20

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=-10 A

-5

-

V

Collector Cut-off Current

ICBO

VCB=-30V

-

-100

nA

Emitter Cut-off Current

IEBO

VEB=-5V

-

-100

nA

DC Current Gain

BCW29

hFE

VCE=-5V, IC=-2mA

110

-

220

BCW30

200

-

450

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-10mA, IB=-0.5mA

-

-0.25

V

Base-Emitter On Voltage

VBE(ON)

VCE=-5V, IC=-2mA

-0.55

-

-0.7

V

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

4

pF

Noise Figure

NF

VCE=-5V, IC=-0.2mA

RS=2k , f=1kHz

-

10

dB

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