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BCW31 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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BCW31 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 1 page  2002. 6. 18 1/1 SEMICONDUCTOR TECHNICAL DATA BCW31/32 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 2 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Complementary to BCW29/30. MAXIMUM RATING (Ta=25℃) DIM MILLIMETERS 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX L L P P P 7 +_ ELECTRICAL CHARACTERISTICS (Ta=25℃) * : Package Mounted On 99.9% Alumina 10×8×0.6mm. Marking Lot No. D1 Type Name Lot No. D2 Type Name BCW31 BCW32 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=10μA 30 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA 20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA 5 - - V Collector Cut-off Current ICBO VCB=30V - - 100 nA Emitter Cut-off Current IEBO VEB=5V - - 100 nA DC Current Gain BCW31 hFE VCE=5V, IC=2mA 110 - 220 BCW32 200 - 450 Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - - 0.25 V Base-Emitter On Voltage VBE(ON) VCE=5V, IC=2mA 0.55 - 0.7 V Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 4 pF Noise Figure NF VCE=5V, IC=0.2mA RS=2kΩ, f=1kHz - - 10 dB |
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