KTC9012 datasheet(1/2 Pages) KEC

Part #	KTC9012

Description	EPITAXIAL PLANAR PNP TRANSISTOR

PDF	2 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2010. 6. 25

1/1

SEMICONDUCTOR

TECHNICAL DATA

KTC9012

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・Excellent hFE Linearity.

・Complementary to KTC9013.

MAXIMUM RATING (Ta=25

℃)

TO-92

DIM MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2 3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. EMITTER

3. COLLECTOR

2. BASE

+_

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-500

mA

Emitter Current

IE

500

mA

Collector Power Dissipation

PC*

625

mW

400

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-35V, IE=0

-

-0.1

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-0.1

μA

DC Current Gain

hFE (Note)

VCE=-1V, IC=-50mA

64

-

246

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-100mA, IB=-10mA

-

-0.1

-0.25

V

Base-Emitter Voltage

VBE

IC=-100mA, VCE=-1V

-0.8

-1.0

V

Transition Frequency

fT

VCB=-6V, IC=-20mA, f=100MHz

150

-

MHz

Collector Output Capacitance

Cob

VCB=-6V, IE=0, f=1MHz

-

7.0

-

pF

Note : hFE Classification D:64～91, E:78～112, F:96～135, G:118～166, H:144～202, I:176～246

* Cu Lead-Frame : 625mW

Fe Lead-Frame : 400mW

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