MPS751 datasheet(1/3 Pages) KEC

Part #	MPS751

Description	EPITAXIAL PLANAR PNP TRANSISTOR

PDF	3 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1999. 11. 30

1/3

SEMICONDUCTOR

TECHNICAL DATA

MPS751

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 2

VOLTAGE REGULATOR, RELAY,

LAMP DRIVER, INDUSTRIAL USE

FEATURES

High Voltage : VCEO=-60V(Min.).

High Current : IC(Max.)=-1A.

High Transition Frequency : fT=150MHz(Typ.).

Wide Area of Safe Operation.

Complementary to MPS651.

MAXIMUM RATING (Ta=25

)

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2

3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. EMITTER

3. COLLECTOR

2. BASE

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-

-100

nA

Emitter Cut-off Current

IEBO

VEB=-4V, IC=0

-

-100

nA

DC Current Gain

hFE(1)

VCE=-2V, IC=-50mA

60

-

200

hFE(2)

VCE=-2V, IC=-1A

30

-

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-1mA, IB=0

60

-

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-

-0.2

-0.7

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=-500mA, IB=-50mA

-

-0.85

-1.2

V

Transition Frequency

fT

VCE=-10V, IC=-50mA

-

150

-

MHz

Collector Output Capacitanc

Cob

VCB=-10V, IE=0, f=1MHz

-

12

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

IC

-1

A

Pulse

ICP

-2

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

Note : hFE(1) Classification

0:60

120 , Y:100

200

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