TIP36C datasheet(1/2 Pages) KEC

Part #	TIP36C

Description	TRIPLE DIFFUSED PNP TRANSISTOR

PDF	2 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 2 page

2001. 1. 18

1/2

SEMICONDUCTOR

TECHNICAL DATA

TIP36C

TRIPLE DIFFUSED PNP TRANSISTOR

Revision No : 3

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

Recommended for 75W Audio Frequency

Amplifier Output Stage.

Complementary to TIP35C.

Icmax:-25A.

MAXIMUM RATING (Ta=25

)

1. BASE

2. COLLECTOR

3. EMITTER

TO-3P(N)

K

A

D

B

d

P

PT

M

Q

12

3

A

15.9 MAX

MILLIMETERS

DIM

B

4.8 MAX

C

20.0 0.3

D

2.0 0.3

d

1.0+0.3/-0.25

E2.0

F

1.0

G

3.3 MAX

H9.0

I4.5

J

2.0

K

1.8 MAX

L

20.5 0.5

P

5.45 0.2

Q

Φ3.2 0.2

T

0.6+0.3/-0.1

2.8

M

+

_

+

_

+

_

+

_

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-100V, IE=0

-

-10

A

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-10

A

Collector-emitter Breakdown Voltage

V(BR)CEO

IC=-50mA, IB=0

-100

-

V

DC Current Gain

hFE(1) (Note)

VCE=-5V, IC=-1.5A

55

-

160

hFE(2)

VCE=-4V, IC=-15A

15

-

Collector-Emitter Saturation Voltage

VCE(sat)(1)

IC=-15A, IB=-1.5A

-

-1.8

V

VCE(sat)(2)

IC=-25A, IB=-5.0A

-

-4.0

Base-Emitter Voltage

VBE

VCE=-5V, IC=-5A

-

-1.5

V

Transition Frequency

fT

VCE=-5V, IC=-1A

3.0

-

MHz

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-100

V

Collector-Emitter Voltage

VCEO

-100

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-25

A

Base Current

IB

-5.0

A

Collector Power Dissipation

(Tc=25

)

PC

125

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

Note : hFE(1) Classification R:55~110,

O:80~160

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