BC856 datasheet(1/4 Pages) KODENSHI

Part #	BC856

Description	General purpose application

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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KSD-T5C030-000

1

BC856

PNP Silicon Transistor

PIN Connection

SOT-23

Descriptions

• General purpose application

• Switching application

Features

• High voltage : VCEO=-55V

• Complementary pair with BC846

Ordering Information

Type NO.

Marking

Package Code

TA □ □

BC856

① ②

③

SOT-23

①

Device Code ② hFE Rank ③ Year&Week Code

Absolute maximum ratings

(Ta=25

°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

-80

V

Collector-Emitter voltage

VCEO

-55

V

Emitter-Base voltage

VEBO

-5

V

Collector current

IC

-100

mA

Collector dissipation

PC

200

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Emitter breakdown voltage

BVCEO

IC=-2mA, IB=0

-55

-

V

Base-Emitter turn on voltage

VBE(ON)

VCE=-5V, IC=-2mA

-

-700

mV

Base-Emitter saturation voltage

VBE(sat)

IC=-100mA, IB=-5mA

-

-900

-

mV

Collector-Emitter saturation voltage

VCE(sat)

IC=-100mA, IB=-5mA

-

-650

mV

Collector cut-off current

ICBO

VCB=-35V, IE=0

-

-15

nA

DC current gain

hFE

*

VCE=-5V, IC=-2mA

110

-

800

-

Transition frequency

fT

VCB=-5V, IC=-10mA

-

150

-

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

4.5

pF

Noise figure

NF

VCE=-5V, IC=-200μA,

f=1KHz,Rg=2KΩ

-

10

dB

* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800

B

E

C

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BC856 Datasheet(PDF) 1 Page - KODENSHI_AUK CORP.

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