MMDT4413 datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

MMDT4413

NPN - PNP

Plastic-Encapsulated Transistors

01-June-2005 Rev. B

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol

Min.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V(BR)CBO

-40

IC= -100 μA, IE=0

Collector-emitter breakdown voltage

V(BR)CEO

-40

IC= -1 mA, IB=0

Emitter-base breakdown voltage

V(BR)EBO

IE= -100 μA, IC=0

Collector cut-off current

ICBO

-0.1

VCB= -50 V, IE=0

Collector cut-off current

ICEO

-0.5

VCE= -35 V, IB=0

Emitter cut-off current

IEBO

-0.1

VEB= -5V, IC=0

hFE(1)

VCE= -1V, IC= -0.1mA

hFE(2)

VCE= -1V, IC= -1mA

hFE(3)

100

VCE= -1V, IC= -10mA

hFE(4)

100

300

VCE= -2V, IC= -150mA

DC current gain

hFE(5)

VCE= -2V, IC= -500mA

VCE(sat)1

-0.4

IC= -150 mA, IB= -15mA

Collector-emitter saturation voltage

VCE(sat)2

-0.75

IC= -500 mA, IB= -50mA

VBE(sat)1

-0.75

-0.95

IC= -150 mA, IB= -15mA

Base-emitter saturation voltage

VBE(sat)2

-1.3

IC= -500 mA, IB= -50mA

Transition frequency

f T

200

MHz

VCE= -10V, IC= -20mA, f=100MHz

Output Capacitance

COB

8.5

VCB=-10V, IE= 0, f=1MHz

Delay time

Rise time

VCC=-30 V, VBE=-2.0 V, IC=-150 mA, IB1=-15 mA

Storage time

225

Fall time

VCC=-30 V, IC=-150 mA, IB1 =-IB2 = -15 mA

MMDT4413 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

MMDT4413 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4 5

Datasheet Download

Link URL