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PZTA94 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZTA94 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual PZTA94 PNP Transistor Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The PZTA94 is designed for application requires high voltage. *High Current Gain: IC=300mA at 25 C Description Features o *High Voltage: VCEO=400V (min) at IC=1mA *Complementary With PZTA44 A 9 4 Date Code B C E ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO - - V IC=-100µA,IE=0 IC=-1mA,IB=0 IE=-100µA,IC=0 VCB=-400V,IE=0 IC=- VCE=- V, IC=- BVCEO -400 - - V BVEBO - - V ICBO - - -100 nA - *VCE(sat)1 - *hFE1 *hFE2 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Saturation Voltage DC Current Gain t -400 -6 50 45 -750 -500 mV 1mA,IB=-0.1mA 10 1 mA VCE=- V, IC=- 10 10 mA C - 40 - - Base Satruation Voltage VBE(sat) *hFE3 mV - - - - - VCE=- V, IC=- 10 50 mA o IEBO Emitter-Base Cutoff Current VBE=-6 V,IC=0 - - -100 nA 40 *hFE4 - - VCE=- V, IC=- 10 100mA *VCE(sat)2 *VCE(sat)3 *Pulse width 380 s, Duty Cycle 2% ≦ ≦ µ ICES - - -500 nA Collector-Base Cutoff Current mV mV -750 - - - -350 300 VCE=-400V,VBE=0 IC=- 10mA,IB=-1 mA IC=- 50mA,IB=-5 mA IC=- 10mA,IB=-1 mA MAXIMUM RATINGS Symbol Parameter Value Collector Current -6 2 55~+150 -400 -400 -500 IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage V mA W Storage Temperature - C O VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V Units ABSOLUTE Ta=25C o 5 1.40 1.80 Mi llimeter Mi llimeter SOT-223 01-Jun-2002 Rev. A Page 1 of 2 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 |
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