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SSG4801 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4801 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  SSG4801 -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente 19-Jan-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. FEATURES Simple Drive Requirement Lower On-resistance Low Gate Charge MARKING PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 1 TA = 25°C ID -5 A TA = 70°C -4.2 Pulsed Drain Current 2 IDM -30 A Total Power Dissipation 1 TA = 25°C PD 2 W Linear Derating Factor 0.016 W / °C Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-ambient 1 (Max.) RθJA 62.5 °C / W Notes： 1. Surface Mounted on FR4 Board, t 10sec. ≦ 2. Pulse width 300 μs, duty cycle 2 ≦≦ % SOP-8 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. 4801SS = Date Code S1 G1 G2 S2 D1 D1 D2 D2 |
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