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BD159 Datasheet(PDF) 2 Page - ON Semiconductor

Part # BD159
Description  Plastic Medium Power NPN Silicon Transistor
PDF  3 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD159 Datasheet(HTML) 2 Page - ON Semiconductor

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BD159
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
BVCEO
350
−
Vdc
Collector Cutoff Current (at rated voltage)
ICBO
−
100
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
−
100
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
240
−
25
20
15
10
5.0
0
20
40
60
80
100
120
140
160
Figure 1. Power−Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
1.0
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0.2
0
20
30
50
100
200 300
500
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
TJ = +25°C
VBE @ IC/IB = 10
IC/IB = 5.0
1.0
10
Figure 3. DC Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.01
20
30
50
100
300
200
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
TJ = 150°C
dc
500 ms
10 ms
1.0 ms
The Safe Operating Area Curves indicate IC − VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To
insure
operation
below,
the
maximum
TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mAdc)
10
1.0
2.0
3.0
5.0
10
20
30
50
100
200
300
500
300
200
70
30
20
TJ = 150°C
50
100
+ 100°C
+ 25°C
− 55°C
7.0
70
VCE = 10 V
VCE = 2.0 V



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