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PDM505HC Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation

Part # PDM505HC
Description  50A 500V
PDF  3 Pages
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PDM505HC Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation

  PDM505HC Datasheet HTML 1Page - Nihon Inter Electronics Corporation PDM505HC Datasheet HTML 2Page - Nihon Inter Electronics Corporation PDM505HC Datasheet HTML 3Page - Nihon Inter Electronics Corporation  
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■定格・特性曲線
80
60
40
20
0
02468
10
12
DRAIN TO SOURCE VOLTAGE VDS (V)
TC=25℃ 250μs Pulse Test
VGS=10V
8V
6V
5V
Fig. 1 Typical Output Characteristics
12
10
8
6
4
2
0
1
2
5
10
20
50
100
DRAIN TO SOURCE VOLTAGE VDS (V)
VGS=0V f=1MHz
Ciss
Coss
Fig. 4 Typical Capacitance
Fig. 4 Vs. Drain-Source Voltage
1000
500
100
200
50
20
10
1
2
5
10
20
50
100
RG=5Ω VDD=250V TC=25℃ 80μs Pulse Test
DRAIN CURRENT ID (A)
td(off)
td(on)
tr
tf
Fig. 7 Typical Switching Time
Fig. 7 Vs. Drain Current
200
50
100
20
10
5
0.5
1
2
0.2
1
2
5
10
20
50
100
500
200
1000
DRAIN TO SOURCE VOLTAGE VDS (V)
TC=25℃ Tj=150℃MAX Single Pulse
10μs
1ms
10ms
DC
100μs
Operation in this area
is limited by RDS (on)
Fig. 10 Maximum Safe Operating Area
8
6
4
2
0
0
4
8
12
16
GATE TO SOURCE VOLTAGE VGS (V)
TC=25℃ 250μs Pulse Test
25A
15A
ID=50A
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2 Vs. Gate-Source Voltage
16
12
8
4
0
0
100
200
300
400
500
600
TOTAL GATE CHRAGE Qg (nC)
ID=35A
VDD=100V
250V
400V
Fig. 5 Typical Gate Charge
Fig. 5 Vs. Gate-Source Voltage
120
100
80
60
40
20
0
0
0.3
0.6
0.9
1.2
1.5
1.8
SOURCE TO DRAIN VOLTAGE VSD (V)
250μs Pulse Test
Tj=125℃
Tj=25℃
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8 Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
10
-2
10
-1
110
PULSE DURATION t (s)
Per Unit Base
Rth(j-c)=0.36℃/W
1 Shot Pulse
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
16
12
8
4
0
-40
0
40
80
120
160
JUNCTION TEMPERATURE Tj ( )
VGS=10V 250μs Pulse Test
25A
15A
ID=50A
℃
Fig. 3 Typical Drain-Source On Voltage
Fig. 3 Vs. Junction Temperature
5
2
0.5
1
0.2
0.1
0.05
2
5
10
20
50
100
200
ID=25A VDD=250V TC=25℃ 80μs Pulse Test
SERIES GATE IMPEDANCE RG ( )
Ω
td(off)
td(on)
tr
tf
Fig. 6 Typical Switching Time
Fig. 6 Vs. Series Gate impedance
500
200
50
100
20
10
5
0
100
200
300
400
500
600
-dis/dt (A/
μs)
trr
IR
IS=50A  IS=25A Tj=125℃
Fig. 9 Typical Reverse Recovery Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
10
-2
10
-1
110
PULSE DURATION t (s)
Per Unit Base
Rth(j-c)=2.0℃/W
1 Shot Pulse
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)



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