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BUV26 Datasheet(PDF) 2 Page - ON Semiconductor |
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BUV26 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 3 page ![]() BUV26 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) VCEO(sus) 90 − Vdc Collector Cutoff Current at Reverse Bias (VCE = 180 V, VBE = −1.5 V, TC = 125°C) ICEX − 1.0 mAdc Emitter Base Reverse Voltage (IE = 50 mA) VEBO 7.0 30 V Emitter Cutoff Current (VEB = 5.0 V) IEBO − 1.0 mAdc Collector Cutoff Current (VCE = 180 V, RBE = 50 W, TC = 125°C) ICER − 3.0 mAdc ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 6.0 A, IB = 0.4 A) (IC = 12 A, IB = 1.2 A) VCE(sat) − − 0.6 1.5 Vdc Base−Emitter Saturation Voltage (IC = 12 A, IB = 1.2 A) VBE(sat) − 2.0 Vdc SWITCHING CHARACTERISTICS (Resistive Load) Turn On Time IC = 12 A, IB = 1.2 A ton − 0.6 ms Storage Time VCC = 50 V, VBE = 6.0 V ts − 1.0 Fall Time RB2 = 2.5 W tf − 0.15 SWITCHING CHARACTERISTICS (Inductive Load) Storage Time VCC = 50 V, IC = 12 A IB(end) = 1.2 A, VB = 5.0 V LB = 0.5 pH, TJ = 125°C Ts − 2.0 ms Fall Time Tf − .15 1. Pulse Test: Pulse width p 300 ms; Duty cycle p 2%. |
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