MBD101 datasheet(1/4 Pages) ONSEMI

Part #	MBD101

Description	Schottky Barrier Diodes

PDF	4 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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March, 2007 − Rev. 3

1

Publication Order Number:

MBD101/D

MBD101, MMBD101LT1

Preferred Device

Schottky Barrier Diodes

Designed primarily for UHF mixer applications but suitable also for

use in detector and ultra−fast switching circuits. Supplied in an

inexpensive plastic package for low−cost, high−volume consumer

requirements. Also available in Surface Mount package.

Features

• Low Noise Figure − 6.0 dB Typ @ 1.0 GHz

• Very Low Capacitance − Less Than 1.0 pF

• High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

VR

7.0

V

Forward Power Dissipation

TA = 25°C

MBD101

MMBD101LT1

Derate above 25

°C

MBD101

MMBD101LT1

PF

280

225

2.2

1.8

mW

mW/

°C

Junction Temperature

TJ

+150

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

7.0

10

−

V

Diode Capacitance

(VR = 0, f = 1.0 MHz,

Note 1, page 2)

CD

−

0.88

1.0

pF

Forward Voltage

(IF = 10 mA)

VF

−

0.5

0.6

V

Reverse Leakage

(VR = 3.0 V)

IR

−

0.02

0.25

mA

http://onsemi.com

SOT−23 (TO−236)

CASE 318

STYLE 8

Preferred devices are recommended choices for future use

and best overall value.

1

2

3

Device

Package

Shipping†

ORDERING INFORMATION

MBD101

TO−92

5000 Units / Box

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MBD101G

TO−92

(Pb−Free)

5000 Units / Box

MMBD101LT1

SOT−23

3000 / Tape & Reel

MMBD101LT1G

SOT−23

(Pb−Free)

3000 / Tape & Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

4M M

G

A

= Assembly Location

Y

= Year

WW = Work Week

4M

= Device Code (SOT−23)

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING

DIAGRAMS

3

CATHODE

1

ANODE

2

CATHODE

1

ANODE

(Pin 2 Not Connected)

TO−92 2−Lead

CASE 182

STYLE 1

1

2

SILICON SCHOTTKY

BARRIER DIODES

MBD

101

AYWW

G

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