MJD50 datasheet(2/5 Pages) ONSEMI

2 / 5 page

MJD47, MJD50

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

MJD47

(IC = 30 mAdc, IB = 0)

MJD50

VCEO(sus)

250

400

−

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

MJD47

(VCE = 300 Vdc, IB = 0)

MJD50

ICEO

−

0.2

mAdc

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

MJD47

(VCE = 500 Vdc, VBE = 0)

MJD50

ICES

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1 Adc, VCE = 10 Vdc)

hFE

150

−

Collector−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

VCE(sat)

−

Vdc

Base−Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)

−

MHz

Small−Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

−

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Figure 1. Power Derating

T, TEMPERATURE (

°C)

100

125

150

Figure 2. Switching Time Equivalent Circuit

APPROX

+11 V

-4 V

SCOPE

VCC

RB and RC VARIED TO OBTAIN

DESIRED CURRENT LEVELS.

2.5

1.5

0.5

TA TC

DUTY CYCLE

≈ 2%

APPROX -9 V

t1 ≤ 7 ns

10 < t2 < 500 ms

t3 < 15 ns

Vin 0

Cjd << Ceb

Vin

APPROX

+11 V

Vin

TURN-ON PULSE

TA (SURFACE MOUNT)

VEB(off)

TURN-OFF PULSE

TYPICAL CHARACTERISTICS

MJD50 Datasheet(PDF) 2 Page - ON Semiconductor

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