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MJF32CG Datasheet(PDF) 2 Page - ON Semiconductor

Part # MJF32CG
Description  Complementary Silicon Plastic Power Transistors
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJF32CG Datasheet(HTML) 2 Page - ON Semiconductor

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MJF31C (NPN), MJF32C (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
100
−
Vdc
Collector Cutoff Current
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ICEO
−
0.3
mAdc
Collector Cutoff Current
ICES
−
200
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
−
50
−
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
VCE(sat)
−
1.2
Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
−
MHz
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
−
−
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
100
0
1.0
160
2.0
3.0
60
80
40
140
4.0
20
120
TC
TA
0
10
20
30
40
TC
TA
TURN-ON PULSE
APPROX
+11 V
Vin 0
VEB(off)
t1
APPROX
+11 V
Vin
t2
TURN-OFF PULSE
t3
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE
≈ 2.0%
APPROX -9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
-4.0 V
Figure 2. Switching Time Equivalent Circuit
0.03
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.1
3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
0.5
0.3
0.1
0.05
0.05
0.3
0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07
0.7
tr @ VCC = 30 V



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