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MPSW92 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MPSW92
Description  One Watt High Voltage Transistor
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MPSW92 Datasheet(HTML) 2 Page - ON Semiconductor

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MPSW92
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−300
−
Vdc
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−300
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current
(VCB = −200 Vdc, IE = 0)
ICBO
−
−0.25
mAdc
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
IEBO
−
−0.1
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −30 mAdc, VCE = −10 Vdc)
hFE
25
40
25
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
VCE(sat)
−
−0.5
Vdc
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
VBE(sat)
−
−0.9
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz)
fT
50
−
MHz
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.0
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping†
MPSW92
TO−92
5000 Units / Box
MPSW92G
TO−92
(Pb−Free)
5000 Units / Box
MPSW92RLREG
TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.



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