MPSW55 datasheet(2/4 Pages) ONSEMI

2 / 4 page

MPSW55, MPSW56

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = −1.0 mAdc, IB = 0)

MPSW55

MPSW56

V(BR)CEO

−60

−80

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

V(BR)EBO

−4.0

−

Vdc

Collector Cutoff Current

(VCE = −40 Vdc, IB = 0)

MPSW55

(VCE = −60 Vdc, IB = 0)

MPSW56

ICES

−

−0.5

mAdc

Collector Cutoff Current

(VCB = −40 Vdc, IE = 0)

MPSW55

(VCB = −60 Vdc, IE = 0)

MPSW56

ICBO

−

−0.1

mAdc

Emitter Cutoff Current

(VEB = −3.0 Vdc, IC = 0)

IEBO

−

−0.1

mAdc

ON CHARACTERISTICS(1)

DC Current Gain

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −250 mAdc, VCE = −1.0 Vdc)

hFE

100

−

Collector−Emitter Saturation Voltage

(IC = −250 mAdc, IB = −10 mAdc)

VCE(sat)

−

−0.5

Vdc

Base−Emitter On Voltage

(IC = −250 mAdc, VCE = −5.0 Vdc)

VBE(on)

−

−1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = −250 mAdc, VCE = −5.0 Vdc, f = 20 MHz)

−

MHz

Output Capacitance

(VCB = −10 Vdc, f = 1.0 MHz)

Cobo

−

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

-0.5

-0.7

-1.0

-2.0

-3.0

-5.0

-7.0

-10

-20

-30

-50

-70

-100

-200

200

100

TJ = 125°C

°C

-55

°C

VCE = -1.0 V

-300

-500

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