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AR1PD Datasheet(PDF) 1 Page - Vishay Siliconix |
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AR1PD Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() Document Number: 89289 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Fast Avalanche Rectifiers AR1PD thru AR1PM Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • Low reverse current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V to 1000 V IFSM 30 A, 25 A trr 140 ns, 120 ns IR 1 μA EAS 20 mJ TJ max. 175 °C DO-220AA (SMP) eSMP ® Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL AR1PD AR1PG AR1PJ AR1PK AR1PM UNIT Device marking code ARD ARG ARJ ARK ARM Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Average forward current IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 25 A Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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