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2010 ROHM Co., Ltd. All rights reserved.

2010.04 - Rev.D

Medium Power Transistor (

32V,1A)

2SA1515S / 2SB1237



Features



Dimensions (Unit : mm)

0.2V(Typ.)

500mA / 50mA)

2) Compliments 2SD1858



Structure

Epitaxial planar type

PNP silicon transistor



Absolute maximum ratings (Ta=25

C)

Parameter

Tj

Tstg

−40

V

V

V

A(DC)

W

−32

−5

−1

A(Pulse)

−2

0.3

1

2SA1515S

2SB1237

150

−55 to +150

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

C

C



Electrical characteristics (Ta=25

C)

Transition frequency

Output capacitance

DC current transfer ratio

=

Parameter

Symbol

Cob

Min.

−40

−32

−5

−

−

120

−

−

−

−

−

−

−

−

−

−0.2

150

20

−

−

−

−0.5

−0.5

390

−0.5

∗

∗

−

30

=

−50μA

=

−1mA

=

−50μA

=

−20V

=

−4V

=

−500mA/−50mA

=

=

V

V

μA

μA

−

V

MHz

pF

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

2SB1237

(1) Emitter

(2) Collector

(3) Base

ROHM :

ATV

6.8 0.2

2.5 0.2

1.05

0.45 0.1

2.54 2.54

0.5 0.1

(1)

(2)

(3)

0.65Max.

+−

+−

+−

+−

4 0.2

0.45

5

(1) (2) (3)

(1) Emitter

(2) Collector

(3) Base

ROHM : SPT

EIAJ : SC-72

2SA1515S

+−

2 0.2

0.45

0.5

+−