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2011.03 - Rev.B

Power transistor (60V, 3A)

2SC5826



Features



Dimensions (Unit : mm)

1) High speed switching.

2) Low saturation voltage, typically

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2073



Applications

Low frequency amplifier

High speed switching



Structure

NPN Silicon epitaxial planar transistor



Packaging specifications

Taping

2SC5826

Type

TV2

2500

Package

Basic ordering unit (pieces)

Code



Absolute maximum ratings (Ta=25

C)

Parameter

V

V

V

A

A

W

°C

°C

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

DC

Pulsed

60

60

6

3

6

1.0

150

−55 to 150

∗

∗Pw=100ms

Symbol : C5826

(1) Emitter

(2) Collector

(3) Base

ATV

Taping specifications